Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-09-07
2008-12-16
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S778000, C438S782000, C438S787000, C438S798000, C257SE21625
Reexamination Certificate
active
07465680
ABSTRACT:
A plasma treatment process for increasing the tensile stress of a silicon wafer is described. Following deposition of a dielectric layer on a substrate, the substrate is lifted to an elevated position above the substrate receiving surface and exposed to a plasma treatment process which treats both the top and bottom surface of the wafer and increases the tensile stress of the deposited layer. Another embodiment of the invention involves biasing of the substrate prior to plasma treatment to bombard the wafer with plasma ions and raise the temperature of the substrate. In another embodiment of the invention, a two-step plasma treatment process can be used where the substrate is first exposed to a plasma at a processing position directly after deposition, and then raised to an elevated position where both the top and bottom of the wafer are exposed to the plasma.
REFERENCES:
patent: 4962049 (1990-10-01), Chang et al.
patent: 5194118 (1993-03-01), Shinohara
patent: 5681425 (1997-10-01), Chen
patent: 5707485 (1998-01-01), Rolfson et al.
patent: 5820723 (1998-10-01), Benjamin et al.
patent: 5948704 (1999-09-01), Benjamin et al.
patent: 6037237 (2000-03-01), Park et al.
patent: 6287977 (2001-09-01), Hashim et al.
patent: 6514870 (2003-02-01), Rossman
patent: 6528427 (2003-03-01), Chebi et al.
patent: 6559061 (2003-05-01), Hashim et al.
patent: 6709987 (2004-03-01), Hashim et al.
patent: 6781086 (2004-08-01), Choi
patent: 6974768 (2005-12-01), Kailasam
patent: 2002/0139388 (2002-10-01), Chebi et al.
patent: 2002/0177329 (2002-11-01), Yang et al.
patent: 2004/0063300 (2004-04-01), Chi
patent: 2004/0084146 (2004-05-01), Sekiya
patent: 2004/0149386 (2004-08-01), Numasawa et al.
patent: 2004/0248395 (2004-12-01), Yoneda et al.
patent: 2005/0181598 (2005-08-01), Kailasam
patent: 2006/0105106 (2006-05-01), Balseanu et al.
patent: 2007/0068455 (2007-03-01), Bolden, II
patent: 1 186 685 (2002-03-01), None
patent: 56-138916 (1981-10-01), None
patent: 06-333922 (1994-12-01), None
Thurn et al., “Stress Hysteresis and Mechanical Properties of Plasma-Enhanced Chemical Vapor Deposited Dielectric Films,”Journal of Applied Physics, American Institute of Physics,vol. 95, No. 3, Feb. 1, 2004, pp. 967-976.
Ramkumar et al., “Stress in Si02Films Deposited by Plasma and Ozone Tetraethylorthosilicate Chemical Vapor Deposition Processes,”Journal of Electrochemical Society,vol. 139, No. 5, May 1, 1992, pp. 1437-1442.
Chen Xiaolin
Li DongQing
Menezes Marlon E.
Munro Jeffrey C.
Nemani Srinivas D.
Applied Materials Inc.
Estrada Michelle
Stark Jarrett J
Townsend and Townsend and Crew
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