Polycrystalline silicon layer with nano-grain structure and...

Details Polycrystalline silicon layer with nano-grain structure and... Polycrystalline silicon layer with nano-grain structure and...

2007-06-19

2007-06-19

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

By differential heating

C438S795000, C257SE21517

Reexamination Certificate

active

10707878

ABSTRACT:
A method of forming polycrystalline silicon with ultra-small grain sizes employs a differential heating of the upper and lower sides of the substrate of a CVD apparatus, in which the lower side of the substrate receives considerably more power than the upper side, preferable more than 75% of the power; and in which the substrate is maintained during deposition at a temperature more than 50° C. above the 550° C. crystallization temperature of silicon.

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Silicon Processing for the VLSI Era, S. Wolf and R. N. Tauber, Lattice Press, Sunset Beach CA, USA 1986—pp. 179-181.

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