Plasma reactor with apparatus for dynamically adjusting the...

Coating apparatus – Gas or vapor deposition – Work support

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C118S730000, C118S7230AN, C156S345540, C156S345550

Reexamination Certificate

active

07419551

ABSTRACT:
A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and comprising a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to said inner and outer applicator portions, and tilt apparatus capable of tilting either the workpiece support pedestal or the outer applicator portion about a radial axis perpendicular to said axis of symmetry and capable of rotating said workpiece support pedestal about said axis of symmetry. In a preferred embodiment, the reactor further includes apparatus for effecting axially symmetrical adjustments of plasma distribution, which may be either (or both) elevation apparatus for changing the location of said inner and outer portions relative to one another along said vertical axis of symmetry, or apparatus for apportioning the RF power levels applied to the inner and outer applicator portions.

REFERENCES:
patent: 4512841 (1985-04-01), Cunningham et al.
patent: 5110407 (1992-05-01), Ono et al.
patent: 5888413 (1999-03-01), Okumura et al.
patent: 5975013 (1999-11-01), Holland et al.
patent: 6054013 (2000-04-01), Collins et al.
patent: 6229264 (2001-05-01), Ni et al.
patent: 6414648 (2002-07-01), Holland et al.
patent: 2003/0044529 (2003-03-01), Wu et al.
patent: 2007/0256787 (2007-11-01), Chandrachood et al.
patent: 2007/0257008 (2007-11-01), Chandrachood et al.
patent: 2007/0257009 (2007-11-01), Chandrachood et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Plasma reactor with apparatus for dynamically adjusting the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma reactor with apparatus for dynamically adjusting the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma reactor with apparatus for dynamically adjusting the... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3971079

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.