Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2011-04-19
2011-04-19
Huynh, Andy (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S765000, C438S771000, C438S772000, C438S775000, C438S776000, C438S777000, C257S411000, C118S7230MW, C118S7230AN
Reexamination Certificate
active
07928018
ABSTRACT:
The application of oxynitriding treatment to electronic appliances involve the problem that N2ions are formed to thereby damage any oxynitride film. It is intended to provide a method of plasma treatment capable of realizing high-quality oxynitriding and to provide a process for producing an electronic appliance in which use is made of the method of plasma treatment. There is provided a method of plasma treatment, comprising generating plasma with a gas for plasma excitation and introducing a treating gas in the plasma to thereby treat a treatment subject, wherein the treating gas contains nitrous oxide gas, this nitrous oxide gas introduced in a plasma of <2.24 eV electron temperature, so that the generation of ions tending to damage any insulating film is reduced to thereby realize high-quality oxynitriding. Further, there is provided a process for producing an electronic appliance in which use is made of the method of plasma treatment.
REFERENCES:
patent: 6830652 (2004-12-01), Ohmi et al.
patent: 2004/0245584 (2004-12-01), Murakawa et al.
patent: 2001-500327 (2000-01-01), None
patent: 2000-294550 (2000-10-01), None
patent: 2003-068731 (2003-03-01), None
patent: 2003-183839 (2003-07-01), None
Hayakawa Yukio
Ohmi Tadahiro
Teramoto Akinobu
Yamauchi Hiroshi
Brown Valerie
Foley & Lardner LLP
Foundation for Advancement of International Science
Huynh Andy
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