Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into...
Reexamination Certificate
2006-05-02
2006-05-02
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
C438S030000, C438S151000, C204S192380
Reexamination Certificate
active
07037813
ABSTRACT:
A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas including the species to be implanted in the surface layer of the workpiece. The method includes generating from the process gas a plasma by capacitively coupling RF source power across the workpiece support and the ceiling or the sidewall from an RF source power generator. The method further includes applying an RF bias from an RF bias generator to the workpiece support.
REFERENCES:
patent: 2344138 (1944-03-01), Drummond
patent: 3109100 (1963-10-01), Gecewicz
patent: 3576685 (1971-04-01), Swann et al.
patent: 3907616 (1975-09-01), Wiemer
patent: 4116791 (1978-09-01), Zega
patent: 4382099 (1983-05-01), Legge et al.
patent: 4385946 (1983-05-01), Finegan et al.
patent: 4434036 (1984-02-01), Hoerschelmann et al.
patent: 4465529 (1984-08-01), Arima et al.
patent: 4481229 (1984-11-01), Suzuki et al.
patent: 4500563 (1985-02-01), Ellenberger et al.
patent: 4521441 (1985-06-01), Flowers
patent: 4539217 (1985-09-01), Farley
patent: 4565588 (1986-01-01), Seki et al.
patent: 4698104 (1987-10-01), Barker et al.
patent: 4764394 (1988-08-01), Conrad
patent: 4778561 (1988-10-01), Ghanbari
patent: 4867859 (1989-09-01), Harada et al.
patent: 4871421 (1989-10-01), Ogle et al.
patent: 4912065 (1990-03-01), Mizuno et al.
patent: 4937205 (1990-06-01), Nakayama et al.
patent: 4948458 (1990-08-01), Ogle
patent: 5061838 (1991-10-01), Lane et al.
patent: 5074456 (1991-12-01), Degner et al.
patent: 5106827 (1992-04-01), Borden et al.
patent: 5107201 (1992-04-01), Ogle
patent: 5270250 (1993-12-01), Murai et al.
patent: 5277751 (1994-01-01), Ogle
patent: 5288650 (1994-02-01), Sandow
patent: 5290382 (1994-03-01), Zarowin et al.
patent: 5312778 (1994-05-01), Collins et al.
patent: 5354381 (1994-10-01), Sheng
patent: 5423945 (1995-06-01), Marks et al.
patent: 5435881 (1995-07-01), Ogle
patent: 5505780 (1996-04-01), Dalvie et al.
patent: 5510011 (1996-04-01), Okamura et al.
patent: 5514603 (1996-05-01), Sato
patent: 5520209 (1996-05-01), Goins et al.
patent: 5542559 (1996-08-01), Kawakami et al.
patent: 5561072 (1996-10-01), Saito
patent: 5569363 (1996-10-01), Bayer et al.
patent: 5572038 (1996-11-01), Sheng et al.
patent: 5587038 (1996-12-01), Cecchi et al.
patent: 5627435 (1997-05-01), Jansen et al.
patent: 5648701 (1997-07-01), Hooke et al.
patent: 5653811 (1997-08-01), Chan
patent: 5654043 (1997-08-01), Shao et al.
patent: 5665640 (1997-09-01), Foster et al.
patent: 5674321 (1997-10-01), Pu et al.
patent: 5683517 (1997-11-01), Shan
patent: 5711812 (1998-01-01), Chapek et al.
patent: 5718798 (1998-02-01), Deregibus
patent: 5770982 (1998-06-01), Moore
patent: 5897752 (1999-04-01), Hong et al.
patent: 5911832 (1999-06-01), Denholm et al.
patent: 5935077 (1999-08-01), Ogle
patent: 5944942 (1999-08-01), Ogle
patent: 5948168 (1999-09-01), Shan et al.
patent: 5985742 (1999-11-01), Henley et al.
patent: 5994207 (1999-11-01), Henley et al.
patent: 5994236 (1999-11-01), Ogle
patent: 5998933 (1999-12-01), Shun'Ko
patent: 6000360 (1999-12-01), Koshimizu
patent: 6013567 (2000-01-01), Henley et al.
patent: 6020592 (2000-02-01), Liebert et al.
patent: 6041735 (2000-03-01), Murzin et al.
patent: 6050218 (2000-04-01), Chen et al.
patent: 6076483 (2000-06-01), Shintani et al.
patent: 6101971 (2000-08-01), Denholm et al.
patent: 6103599 (2000-08-01), Henley et al.
patent: 6132552 (2000-10-01), Donohoe et al.
patent: 6139697 (2000-10-01), Chen et al.
patent: 6150628 (2000-11-01), Smith et al.
patent: 6153524 (2000-11-01), Henley et al.
patent: 6155090 (2000-12-01), Rubensson
patent: 6164241 (2000-12-01), Chen et al.
patent: 6165376 (2000-12-01), Miyake et al.
patent: 6182604 (2001-02-01), Goeckner et al.
patent: 6187110 (2001-02-01), Henley et al.
patent: 6207005 (2001-03-01), Henley et al.
patent: 6237527 (2001-05-01), Kellerman et al.
patent: 6239553 (2001-05-01), Barnes et al.
patent: 6248642 (2001-06-01), Dolan et al.
patent: 6265328 (2001-07-01), Henley et al.
patent: 6291313 (2001-09-01), Henley et al.
patent: 6291938 (2001-09-01), Jewett et al.
patent: 6300643 (2001-10-01), Fang et al.
patent: 6305316 (2001-10-01), DiVergilio et al.
patent: 6321134 (2001-11-01), Henley et al.
patent: 6335536 (2002-01-01), Goeckner et al.
patent: 6339297 (2002-01-01), Sugai et al.
patent: 6341574 (2002-01-01), Bailey, III et al.
patent: 6348126 (2002-02-01), Hanawa et al.
patent: 6350697 (2002-02-01), Richardson et al.
patent: 6392351 (2002-05-01), Shunko
patent: 6395150 (2002-05-01), Van Cleemput et al.
patent: 6403453 (2002-06-01), Ono et al.
patent: 6410449 (2002-06-01), Hanawa et al.
patent: 6413321 (2002-07-01), Kim et al.
patent: 6417078 (2002-07-01), Dolan et al.
patent: 6418874 (2002-07-01), Cox et al.
patent: 6433553 (2002-08-01), Goeckner et al.
patent: 6453842 (2002-09-01), Hanawa et al.
patent: 6461972 (2002-10-01), Kabansky
patent: 6468388 (2002-10-01), Hanawa et al.
patent: 6494986 (2002-12-01), Hanawa et al.
patent: 6511899 (2003-01-01), Henley et al.
patent: 6513538 (2003-02-01), Chung et al.
patent: 6514838 (2003-02-01), Chan
patent: 6528391 (2003-03-01), Henley et al.
patent: 6551446 (2003-04-01), Hanawa et al.
patent: 6559408 (2003-05-01), Smith et al.
patent: 6579805 (2003-06-01), Bar-Gadda
patent: 6582999 (2003-06-01), Henley et al.
patent: 6593173 (2003-07-01), Anc et al.
patent: 6679981 (2004-01-01), Pan et al.
patent: 6800559 (2004-10-01), Bar-Gadda
patent: 6811448 (2004-11-01), Paton et al.
patent: 6838695 (2005-01-01), Doris et al.
patent: 2001/0042827 (2001-11-01), Fang et al.
patent: 2002/0047543 (2002-04-01), Sugai et al.
patent: 2003/0013260 (2003-01-01), Gossman et al.
patent: 2003/0013314 (2003-01-01), Ying et al.
patent: 2003/0085205 (2003-05-01), Lai et al.
patent: 0 546 852 (1993-06-01), None
patent: 0 836 218 (1998-04-01), None
patent: 0 964 074 (1999-12-01), None
patent: 1 111 084 (2001-06-01), None
patent: 1 158 071 (2001-11-01), None
patent: 1 191 121 (2002-03-01), None
patent: 59-86214 (1984-05-01), None
patent: 59-218728 (1984-12-01), None
patent: 62-120041 (1987-06-01), None
patent: 070455542 (1995-02-01), None
patent: 2000150908 (2000-05-01), None
patent: WO 99/00832 (1999-01-01), None
patent: WO 01/11651 (2001-02-01), None
patent: WO 02/25694 (2002-03-01), None
patent: WO 93/18201 (2003-09-01), None
Stanley Wolf, Silicon Processing for the VLSI Era, vol. 1, Lattice Press. pp. 303-308.
Zhang, B.C., and Cross, R.C., “A high power radio frequency transformer for plasma production,”Rev. Sci. Instrum., vol. 69, No. 1, pp. 101-108, Jan. 1998.
U.S. Appl. No.: 09/638,075, filed Aug. 11, 2000, entitled, “Externally Excited Torroidal Plasma Source,” By Hiroji Hanawa, et al.
Hu, C.-K., et al., “A process for improved Al(cu) reactive ion etching”, Journal of Vacuum Science and Technology, May 1, 1989, pp. 682-685, vol. 7, No. 3, American Institute of Physics, New York, U.S.
Al-Bayati Amir
Collins Kenneth S.
Gallo Biagio
Hanawa Hiroji
Monroy Gonzalo Antonio
Applied Materials Inc.
Ghyka Alexander
Law Office of Robert M. Wallace
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