Plasma immersion ion implantation process

Details Plasma immersion ion implantation process Plasma immersion ion implantation process

2007-10-30

2007-10-30

Deo, Duy-Vu N (Department: 1765)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S783000, C134S001000, C134S001100

Reexamination Certificate

active

11046562

ABSTRACT:
One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning film precursor gas into the chamber and generating a plasma within the chamber, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma, and then removing the workpiece from the chamber and removing the seasoning film from the chamber interior surfaces.

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