Plasma immersion ion implantation process

Details Plasma immersion ion implantation process Plasma immersion ion implantation process

2006-08-22

2006-08-22

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S514000, C438S495000, C438S508000, C216S067000, C216S080000, C156S345370, C257SE21316

Reexamination Certificate

active

07094670

ABSTRACT:
A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, includes placing the workpiece on a workpiece support in the chamber, controlling a temperature of the wafer support near a constant level, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma while minimizing deposition and minimizing etching by holding the temperature of the workpiece within a temperature range that is above a workpiece deposition threshold temperature and below a workpiece etch threshold temperature.

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