Plasma immersion ion implantation method using a pure or...

Details Plasma immersion ion implantation method using a pure or... Plasma immersion ion implantation method using a pure or...

2011-06-28

2011-06-28

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S516000, C257SE21057

Reexamination Certificate

active

07968439

ABSTRACT:
Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.

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