Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2004-05-12
2008-10-07
Ahmed, Shamim (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
C216S061000, C216S067000, C438S706000, C438S710000, C438S714000
Reexamination Certificate
active
07431857
ABSTRACT:
A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a first frequency and supplying a second RF signal from the source to the electrode within the processing chamber at a second frequency. The second frequency is different from the first frequency by an amount equal to a desired frequency. Characteristics of a plasma formed in the chamber establish a sheath modulation at the desired frequency.
REFERENCES:
patent: 4579618 (1986-04-01), Celestino et al.
patent: 4585516 (1986-04-01), Corn et al.
patent: 4863549 (1989-09-01), Grunwald
patent: 5065118 (1991-11-01), Collins et al.
patent: 5077499 (1991-12-01), Oku
patent: 5512130 (1996-04-01), Barna et al.
patent: 5534751 (1996-07-01), Lenz et al.
patent: 5556501 (1996-09-01), Collins et al.
patent: 5570031 (1996-10-01), Sasaki et al.
patent: 5643364 (1997-07-01), Zhao et al.
patent: 5698062 (1997-12-01), Sakamoto et al.
patent: 5817534 (1998-10-01), Ye et al.
patent: 5985375 (1999-11-01), Donohoe et al.
patent: 6089181 (2000-07-01), Suemasa et al.
patent: 6110287 (2000-08-01), Arai et al.
patent: 6113731 (2000-09-01), Shan et al.
patent: 6126778 (2000-10-01), Donohoe et al.
patent: 6190496 (2001-02-01), DeOrnellas et al.
patent: 6193855 (2001-02-01), Gopalraja et al.
patent: 6309978 (2001-10-01), Donohoe et al.
patent: 6312556 (2001-11-01), Donohoe et al.
patent: 6354240 (2002-03-01), DeOrnellas et al.
patent: 6411490 (2002-06-01), Dible
patent: 6642149 (2003-11-01), Suemasa et al.
patent: 2002/0039626 (2002-04-01), Nakahigashi et al.
patent: 2002/0041160 (2002-04-01), Barnes et al.
patent: 2003/0127319 (2003-07-01), Demaray et al.
patent: 2003/0148611 (2003-08-01), Dhindsa et al.
patent: 2004/0045669 (2004-03-01), Okumura et al.
patent: 2005/0090118 (2005-04-01), Shannon et al.
patent: 0553704 (1993-08-01), None
patent: 10-326698 (1998-12-01), None
patent: 2003-073836 (2003-03-01), None
patent: WO 2003-43061 (2003-05-01), None
U.S. Appl. No. 11/060,980, filed Feb. 18, 2005, Paterson et al.
Georgieva, V., et al., “Numerical study of Ar/CF4N2discharges in single- and dual-frequency capacitively coupled plasma reactors”,Journal of Applied Physics, vol. 94, No. 6 (Sep. 15, 2003), 3748-3756.
Lieberman, M. A., et al., “Standing wave and skin effects in large-area, high-frequency capacitive discharges”,Plasma Sources Sci. Technol., 11 (2002), 283-293.
Grimard Dennis
Holland John P.
Panagopoulos Theodoros
Paterson Alex
Shannon Steven C.
Ahmed Shamim
Applied Materials Inc.
Moser IP Law Group
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