Plasma generation and control using a dual frequency RF source

Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting

Reexamination Certificate

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C216S061000, C216S067000, C438S706000, C438S710000, C438S714000

Reexamination Certificate

active

07431857

ABSTRACT:
A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a first frequency and supplying a second RF signal from the source to the electrode within the processing chamber at a second frequency. The second frequency is different from the first frequency by an amount equal to a desired frequency. Characteristics of a plasma formed in the chamber establish a sheath modulation at the desired frequency.

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