Plasma etch apparatus with heated scavenging surfaces

Details Plasma etch apparatus with heated scavenging surfaces Plasma etch apparatus with heated scavenging surfaces

1998-01-07

2000-07-04

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156345, 438723, B44C 122

Patent

active

060834129

ABSTRACT:
The invention is embodied in a method of operating a plasma etch reactor, consisting of introducing a gas into the reactor which disassociates as a plasma into an etch species which etches oxide films on a work piece in the reactor and a non-etching species combinable with the etch species into an etch-preventing polymer condensable onto the work piece below a characteristic deposition temperature, providing an interior wall comprising a material which scavenges the etching species, and maintaining a temperature of the interior wall above the deposition temperature.

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