Plasma etch apparatus with heated scavenging surfaces

Details Plasma etch apparatus with heated scavenging surfaces Plasma etch apparatus with heated scavenging surfaces

1995-07-18

1998-06-23

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 74, 216 67, 438710, 438714, 438723, H05H 100, H01L 2100

Patent

active

057700990

ABSTRACT:
The invention is embodied in a method of operating a plasma etch reactor, consisting of introducing a gas into the reactor which disassociates as a plasma into an etch species which etches oxide films on a work piece in the reactor and a non-etching species combinable with the etch species into an etch-preventing polymer condensable onto the work piece below a characteristic deposition temperature, providing an interior wall comprising a material which scavenges the etching species, and maintaining a temperature of the interior wall above the deposition temperature.

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