Coating apparatus – Gas or vapor deposition – With treating means
Patent
1997-08-12
1998-08-11
Breneman, R. Bruce
Coating apparatus
Gas or vapor deposition
With treating means
118723I, 118729, 31511151, 20429807, C23C 1600
Patent
active
057922721
ABSTRACT:
A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The plasma generated in the plasma chamber extends into the process chamber and interacts with the reactive gases to deposit a layer of material on the wafer. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support and applying r.f. gradient to induce diffusion of the plasma to the area proximate the wafer support.
REFERENCES:
patent: 3656454 (1972-04-01), Schrader
patent: 4512283 (1985-04-01), Bonifield et al.
patent: 4558388 (1985-12-01), Graves
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4724621 (1988-02-01), Hobson et al.
patent: 4771730 (1988-09-01), Tezuka
patent: 4795529 (1989-01-01), Kawasaki et al.
patent: 4798165 (1989-01-01), Deboer
patent: 4828369 (1989-05-01), Hotomi
patent: 4848273 (1989-07-01), Mori
patent: 4876983 (1989-10-01), Fukuda et al.
patent: 4918031 (1990-04-01), Flamm et al.
patent: 4949671 (1990-08-01), Davis et al.
patent: 4960488 (1990-10-01), Law
patent: 4975252 (1990-12-01), Nishizawa
patent: 4986890 (1991-01-01), Setoyama et al.
patent: 4990229 (1991-02-01), Campbell
patent: 5000113 (1991-03-01), Wang et al.
patent: 5091049 (1992-02-01), Campbell et al.
patent: 5105761 (1992-04-01), Charlet
patent: 5122251 (1992-06-01), Campbell et al.
patent: 5124014 (1992-06-01), Foo et al.
patent: 5200232 (1993-04-01), Tappan et al.
patent: 5223457 (1993-06-01), Mintz et al.
patent: 5234529 (1993-08-01), Johnson
patent: 5310452 (1994-05-01), Doki et al.
patent: 5314845 (1994-05-01), Lee
patent: 5330610 (1994-07-01), Eres
patent: 5376628 (1994-12-01), Sekiguchi
patent: 5378311 (1995-01-01), Nagayama
patent: 5389154 (1995-02-01), Hiroshi et al.
patent: 5433812 (1995-07-01), Cuomo
patent: 5449432 (1995-09-01), Hanawa
patent: 5522937 (1996-06-01), Chew
patent: 5525159 (1996-06-01), Hama
patent: 5534231 (1996-07-01), Savas
patent: 5537004 (1996-07-01), Imahashi et al.
patent: 5540800 (1996-07-01), Qian
patent: 5545591 (1996-08-01), Sugai
patent: 5554223 (1996-09-01), Imahashi
patent: 5556501 (1996-09-01), Collins et al.
patent: 5587344 (1996-12-01), Ishikawa
patent: 5597439 (1997-01-01), Salzman
patent: 5614055 (1997-03-01), Fairbairn et al.
patent: 5618382 (1997-04-01), Mintz et al.
patent: 5626679 (1997-05-01), Shimizu et al.
patent: 5681418 (1997-10-01), Ishimaru
patent: 5707692 (1998-01-01), Suzuki et al.
T. Fukuda; K. Saito; et al. "High Quality High Rate SiO.sub.2 and SiN Room Temperature Formation by Utilizing High Excited Ions," IEDM 92, pp. 285-288; .COPYRGT. 1992 IEEE.
C.S. Pai; J.F. Miner; et al. "Electron Cyclotron Resonance Microwave Discharge for Oxide Deposition Using Tetraethoxysilane," J. Electrochem. Soc., vol. 139, No. 3, Mar. 1992, pp. 850-855.
G. Giroult-Matlakowski; et al. "Deposition of Silicon Dioxide Films Using the Helicon Diffusion Reactor for Integrated Optics Applications," Plasma Research Laboratory, Research School of Physical Sciences, Australian National University, GPO Box 4, ACT 2601, Australia.
Durbin William J.
Fenske Dennis C.
Matthiesen Richard H.
Os Ron van
Ross Eric D.
Breneman R. Bruce
Lund Jeffrie R.
Swiatek Maria S.
Test Aldo J.
Watkins-Johnson Company
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