Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1997-02-21
1999-12-14
Breneman, Bruce
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
427569, 2041921, 438714, 438729, 438758, B44C 122, C03C 1500
Patent
active
060012676
ABSTRACT:
A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support, applying r.f. gradient to induce diffusion of the plasma to the area proximate the wafer support, and exhausting the reactor in a substantially symmetrical manner.
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Durbin William J.
Fenske Dennis C.
Matthiesen Richard H.
Os Ron van
Ross Eric D.
Alejandro Luz
Breneman Bruce
Watkins-Johnson Company
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