Photoresist etch back method for gate last process

Details Photoresist etch back method for gate last process Photoresist etch back method for gate last process

2009-06-03

2011-10-18

Everhart, Caridad (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S183000, C257SE21626, C257SE21640

Reexamination Certificate

active

08039381

ABSTRACT:
A method is provided for fabricating a semiconductor device. The method includes providing a substrate including a dummy gate structure formed thereon, removing the dummy gate structure to form a trench, forming a first metal layer over the substrate to fill a portion of the trench, forming a protection layer in a remaining portion of the trench, removing a unprotected portion of the first metal layer, removing the protection layer from the trench, and forming a second metal layer over the substrate to fill the trench.

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Chinese Patent Office, Office Action dated Mar. 29, 2011, Application No. 200910169144.9, 9 pages.

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