Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-02-01
2005-02-01
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S719000, C438S723000, C438S725000, C438S756000
Reexamination Certificate
active
06849531
ABSTRACT:
A method of defining a gate structure for a MOSFET device featuring the employment of dual anti-reflective coating (ARC) layers to enhance gate structure resolution, and featuring a dry procedure for removal of all ARC layers avoiding the use of hot phosphoric acid, has been developed. After formation of a polysilicon layer on an underlying silicon dioxide gate insulator layer, a capping silicon oxide, a dielectric ARC layer, and an overlying organic ARC layer are deposited. A photoresist shape is formed and used as an etch mask to allow a first anisotropic RIE procedure to define the desired gate structure shape in the dual ARC layers and in the capping silicon oxide layer. After removal of the photoresist shape and the overlying organic ARC layer a second anisotropic RIE procedure is used to define a desired polysilicon gate structure, with the second anisotropic RIE procedure also resulting in the removal of the dielectric ARC shape. A final hydrofluoric acid type solution is then used to remove the capping silicon oxide shape as well as to remove the portions of the silicon dioxide gate insulator layer not covered by the polysilicon gate structure.
REFERENCES:
patent: 5612249 (1997-03-01), Sun et al.
patent: 6232209 (2001-05-01), Fujiwara et al.
patent: 6251719 (2001-06-01), Wang
patent: 6283131 (2001-09-01), Chen et al.
patent: 6403432 (2002-06-01), Yu et al.
patent: 6524938 (2003-02-01), Tao et al.
patent: 6531350 (2003-03-01), Satoh et al.
patent: 6579809 (2003-06-01), Yang et al.
patent: 6664604 (2003-12-01), Besser et al.
patent: 6693313 (2004-02-01), Gonzalez et al.
patent: 6764903 (2004-07-01), Chan et al.
Cheng Fang-Chen
Chiu Yuan-Hung
Lin Huin-Jer
Lin Li-Te S.
Tao Hun-Jan
Haynes and Boone LLP
Nguyen Thanh
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Phosphoric acid free process for polysilicon gate definition does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Phosphoric acid free process for polysilicon gate definition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phosphoric acid free process for polysilicon gate definition will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3453715