Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2006-09-05
2008-10-21
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S163000
Reexamination Certificate
active
07440308
ABSTRACT:
A phase-change random access memory device may include a phase-change pattern, a first electrode structure connected to the phase-change pattern, and a second electrode structure spaced apart from the first electrode structure and connected to the phase-change pattern, wherein at least one of the first electrode structure and the second electrode structure includes a plurality of resistor patterns connected to the phase-change pattern in parallel.
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patent: 7170777 (2007-01-01), Choi et al.
patent: 2004/0178404 (2004-09-01), Ovshinsky
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patent: 2006/0091374 (2006-05-01), Yoon et al.
patent: 2006/0163553 (2006-07-01), Liang
Ahn Su-Jin
Jeong Chang Wook
Jeong Won-Cheol
Lee Su-Youn
Park Jae-Hyun
Hoang Huan
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
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