Heating treatment device, heating treatment method and...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07410850

ABSTRACT:
To provide a method and a device for subjecting a film to be treated to a heating treatment effectively by a lamp annealing process, ultraviolet light is irradiated from the upper face side of a substrate where the film o be treated is formed and infrared light is irradiated from the lower face side by which the lamp annealing process is carried out. According to such a constitution, the efficiency of exciting the film to be treated is significantly promoted since electron excitation effect by the ultraviolet light irradiation is added to vibrational excitation effect by the infrared light irradiation and strain energy caused in the film to be treated by the lamp annealing process is removed or reduced by a furnace annealing process.

REFERENCES:
patent: 4001047 (1977-01-01), Boah
patent: 4151008 (1979-04-01), Kirkpatric
patent: 4482395 (1984-11-01), Hiramoto
patent: 4571486 (1986-02-01), Arai et al.
patent: 4643527 (1987-02-01), Magarino et al.
patent: 4659422 (1987-04-01), Sakurai
patent: 4888302 (1989-12-01), Ramesh
patent: 5219786 (1993-06-01), Noguchi
patent: 5278093 (1994-01-01), Yonehara
patent: 5357365 (1994-10-01), Ipposhi et al.
patent: 5534709 (1996-07-01), Yoshimoto et al.
patent: 5583663 (1996-12-01), Boeve
patent: 5612251 (1997-03-01), Lee
patent: 5624851 (1997-04-01), Takayama et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5648277 (1997-07-01), Zhang et al.
patent: 5683935 (1997-11-01), Miyamoto et al.
patent: 5767003 (1998-06-01), Noguchi
patent: 5771110 (1998-06-01), Hirano et al.
patent: 5789762 (1998-08-01), Koyama et al.
patent: 5811327 (1998-09-01), Funai et al.
patent: 5817548 (1998-10-01), Noguchi et al.
patent: 5821135 (1998-10-01), Mei et al.
patent: 5840118 (1998-11-01), Yamazaki
patent: 5854096 (1998-12-01), Ohtani et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5937282 (1999-08-01), Nakajima et al.
patent: 6074900 (2000-06-01), Yamazaki et al.
patent: 6083801 (2000-07-01), Ohtani
patent: 6187616 (2001-02-01), Gyoda
patent: 6348369 (2002-02-01), Kusumoto et al.
patent: 6355512 (2002-03-01), Yamazaki et al.
patent: 6423585 (2002-07-01), Yamazaki et al.
patent: 6500704 (2002-12-01), Hirano et al.
patent: 6528397 (2003-03-01), Taketomi et al.
patent: 6569716 (2003-05-01), Suzuki
patent: 6599790 (2003-07-01), Yamazaki et al.
patent: 6790714 (2004-09-01), Hirano et al.
patent: 6830616 (2004-12-01), Ohtani
patent: 2001/0020702 (2001-09-01), Hirano et al.
patent: 2005/0014316 (2005-01-01), Hirano et al.
patent: 0 124 261 (1987-09-01), None
patent: 0 319 082 (1989-06-01), None
patent: 58-147024 (1983-09-01), None
patent: 58-176928 (1983-10-01), None
patent: 59-205711 (1984-11-01), None
patent: 62-229924 (1987-10-01), None
patent: 62-299011 (1987-12-01), None
patent: 64-076737 (1989-03-01), None
patent: 01-200615 (1989-08-01), None
patent: 02-112227 (1990-04-01), None
patent: 02-237074 (1990-09-01), None
patent: 03-266424 (1991-11-01), None
patent: 04-298020 (1992-10-01), None
patent: 06-236894 (1994-08-01), None
patent: 07-130652 (1995-05-01), None
patent: 07-135318 (1995-05-01), None
patent: 08-051077 (1996-02-01), None
patent: 08-139337 (1996-05-01), None
patent: 08-172050 (1996-07-01), None
patent: 08-293466 (1996-11-01), None
patent: 09-045931 (1997-02-01), None
patent: 09-051100 (1997-02-01), None
Anderson Thermal Devices, Inc. Product Data Sheet, Quartz Infrared Lamp, no date available.
Hirano, et al., “Low Temperature Activation Method of Poly-Si Films Using Rapid Thermal Annealing”, Proceedings of Electronic Imaging '97, 6 pages.
Kiichi Hirano et al., “Low temperature activation method of poly-Si films using rapid thermal annealing,” Proceedings of SPIE, vol. 3014,Active Matrix Liquid Crystal Display Technology and Applications, Tolis Voutsas, Tsu-Jae King eds., pp. 119-126, Mar. 1997.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Heating treatment device, heating treatment method and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heating treatment device, heating treatment method and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heating treatment device, heating treatment method and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3995218

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.