Phase-change random access memory device and method of...

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S163000

Reexamination Certificate

active

07440308

ABSTRACT:
A phase-change random access memory device may include a phase-change pattern, a first electrode structure connected to the phase-change pattern, and a second electrode structure spaced apart from the first electrode structure and connected to the phase-change pattern, wherein at least one of the first electrode structure and the second electrode structure includes a plurality of resistor patterns connected to the phase-change pattern in parallel.

REFERENCES:
patent: 6838692 (2005-01-01), Lung
patent: 7170777 (2007-01-01), Choi et al.
patent: 2004/0178404 (2004-09-01), Ovshinsky
patent: 2005/0112896 (2005-05-01), Hamann et al.
patent: 2006/0091374 (2006-05-01), Yoon et al.
patent: 2006/0163553 (2006-07-01), Liang

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