Phase change memory cell with electrode

Details Phase change memory cell with electrode Phase change memory cell with electrode

2008-01-07

2009-02-03

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S003000

Reexamination Certificate

active

07485487

ABSTRACT:
The present invention in one embodiment provides a method of forming a memory device including providing a first dielectric layer including at least one via containing a metal stud; providing a second dielectric layer atop the first dielectric layer; recessing the metal stud to expose a sidewall of the via; etching the sidewall of the via in the first dielectric layer with a isotropic etch step to produce an undercut region extending beneath a portion of the second dielectric layer; forming a conformal insulating layer on at least the portion of the second dielectric layer overlying the undercut region to provide a keyhole; etching the conformal insulating layer with an anisotropic etch to provide a collar that exposes the metal stud; forming a barrier metal within the collar in contact with the metal stud; and forming a phase change material in contact with the barrier metal.

REFERENCES:
patent: 2007/0246748 (2007-10-01), Breitwisch et al.
patent: 2008/0061341 (2008-03-01), Lung

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