Phase change memory array

Details Phase change memory array Phase change memory array

2005-03-01

2005-03-01

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S063000, C365S100000

Reexamination Certificate

active

06862214

ABSTRACT:
A phase change memory includes a plurality of word lines, a plurality of bits lines intersecting the word lines, and a plurality of memory cells arranged in rows along the word lines and located at corresponding intersection regions of the word lines and bit lines. Each of the memory cells includes a cell transistor having a gate connected to a corresponding word line, and a resistor and a phase change cell connected in series between a drain of the cell transistor and a corresponding bit line. In order to increase a cell drive current, the phase change memory also includes a plurality of auxiliary transistors respectively connected between the drains of the cell transistors of adjacent said memory cells.

REFERENCES:
patent: 6480438 (2002-11-01), Park
patent: 6590907 (2003-07-01), Jones et al.
patent: 6707712 (2004-03-01), Lowery

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