Phase change material with filament electrode

Details Phase change material with filament electrode Phase change material with filament electrode

2009-07-10

2010-12-14

Stark, Jarrett J (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S102000, C438S104000, C257SE21068, C257SE21078

Reexamination Certificate

active

07851323

ABSTRACT:
The present invention, in one embodiment, provides a memory device that includes a phase change memory cell; a first electrode; and a layer of filamentary resistor material positioned between the phase change memory cell and the first electrode, wherein at least one bistable conductive filamentary pathway is present in at least a portion of the layer of filamentary resistor material that provides electrical communication between the phase change memory cell and the first electrode.

REFERENCES:
patent: 2003/0035315 (2003-02-01), Kozicki
patent: 2006/0027893 (2006-02-01), Meijer et al.
patent: 2008/0304311 (2008-12-01), Philipp et al.
T. Sakamoto et al., A Nonvolatile Programmable Solid Electrolyte Nanometer Switch, IEEE International Solid-State Circuits Conference, 2004, Session 16.
C. Rossel et al., Electrical Current Distribution Across a Metal-Insulator-Metal Structure During Bistable Switching, Journal of Applied Physics, 2001, pp. 2892-2898, vol. 90, No. 6.
S. Karg et al., Nanoscale Resistive Memory Device Using SrTiO3 Films, IBM Research, Zurich Research Laboratory, Ruschlikon, Switzerland.

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