PECVD silicon-rich oxide layer for reduced UV charging

Details PECVD silicon-rich oxide layer for reduced UV charging PECVD silicon-rich oxide layer for reduced UV charging

2006-06-13

2006-06-13

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S263000, C438S624000

Reexamination Certificate

active

07060554

ABSTRACT:
A Si-rich silicon oxide layer having reduced UV transmission is deposited by PECVD, on an interlayer dielectric, prior to metallization, thereby reducing Vt. Embodiments include depositing a UV opaque Si-rich silicon oxide layer having an R.I. of 1.7 to 2.0.

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Wolf et al., “Silicon Processing for the VLSI Era”, 1986, Lattice Press, vol. 1, p. 398.

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