Oxygen-rich layers underlying BPSG

Details Oxygen-rich layers underlying BPSG Oxygen-rich layers underlying BPSG

2007-05-15

2010-06-22

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S199000, C438S230000, C257S288000, C257S350000, C257SE21590, C257SE21165, C257SE21507

Reexamination Certificate

active

07741171

ABSTRACT:
An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.

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