Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2007-06-12
2007-06-12
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C257SE21546, C438S788000, C438S771000
Reexamination Certificate
active
10870232
ABSTRACT:
Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 1011ions/cm3from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 1011ions/cm3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.
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Greig Karen
Kapoor Bikram
Lee Young S
Mungekar Hemant P.
Vellaikal Manoj
Applied Materials Inc.
Everhart Caridad
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