Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2005-09-27
2005-09-27
Chaudhari, Chandra (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S799000, C438S903000
Reexamination Certificate
active
06949478
ABSTRACT:
A method of forming an oxide film having high insularity capability is performed within an ultra clean environment, using charged particles.
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Wolf, “Silicon Processing for VLSI Era”, 1986, vol. 1, pp. 166-167.
Aoyama Shintaro
Imaoka Takashi
Konishi Nobuhiro
Morita Mizuho
Nakamura Masakazu
Chaudhari Chandra
Kluth Randall J.
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