Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-21
2008-08-12
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S535000, C257SE21028, C257SE21622
Reexamination Certificate
active
07410852
ABSTRACT:
An opto-thermal annealing method for forming a field effect transistor uses a reflective metal gate so that electrical properties of the metal gate and also interface between the metal gate and a gate dielectric are not compromised when opto-thermal annealing a source/drain region adjacent the metal gate. Another opto-thermal annealing method may be used for simultaneously opto-thermally annealing: (1) a silicon layer and a silicide forming metal layer to form a fully silicided gate; and (2) a source/drain region to form an annealed source/drain region. An additional opto-thermal annealing method may use a thermal insulator layer in conjunction with a thermal absorber layer to selectively opto-thermally anneal a silicon layer and a silicide forming metal layer to form a fully silicide gate.
REFERENCES:
patent: 6043545 (2000-03-01), Tseng et al.
patent: 6150243 (2000-11-01), Wieczorek et al.
patent: 6475888 (2002-11-01), Sohn
patent: 2002/0098689 (2002-07-01), Chong et al.
patent: 2002/0160592 (2002-10-01), Sohn
patent: 2004/0195575 (2004-10-01), Komoda et al.
patent: 2007/0202640 (2007-08-01), Al-Bayati et al.
patent: 2007/0249131 (2007-10-01), Allen et al.
Allen Scott D.
Cabral, Jr. Cyril
Dezfulian Kevin K.
Fang Sunfei
Greene Brian J.
International Business Machines - Corporation
Lindsay, Jr. Walter L
Scully, Scott, Murphy & Presser. P.C.
Trepp, Esq. Robert M.
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