Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Patent
1997-01-13
1999-02-16
Breneman, Bruce
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
216 59, 438 9, 20419233, H01L 2100
Patent
active
058716580
ABSTRACT:
A method for monitoring and controlling a plasma etch method for forming a patterned layer. There is first provided a substrate having a blanket layer formed thereover, the blanket layer having a patterned photoresist layer formed thereupon. There is then etched through a plasma etch method while employing the patterned photoresist layer as a patterned photoresist etch mask layer the blanket layer to form a patterned layer. The plasma etch method is monitored through an optical emission spectroscopy (OES) method which monitors a minimum of a first plasma etchant component which relates to a chemical etching of the blanket layer and a second plasma etchant component which relates to a physical sputter etching of the blanket layer and the patterned photoresist layer. While etching through the plasma etch method there is adjusted at least one of a first control parameter which controls the first plasma etchant component concentration and a second control parameter which controls the second plasma etchant component concentration to provide through the plasma etch method from the blanket layer a patterned layer with a pre-determined blanket layer to patterned photoresist layer plasma etch selectivity. There is also disclosed an apparatus through which the method may be practiced.
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Tao Hun-Jan
Tsai Chia Shiung
Yu Chen-Hua
Ackerman Stephen B.
Alejandro Luz
Breneman Bruce
Saile George O.
Szecsy Alek P.
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