Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-16
2011-08-16
Sefer, A. (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S237000, C438S585000, C257S295000, C257S314000, C257SE21210, C257SE21209
Reexamination Certificate
active
07998804
ABSTRACT:
A nonvolatile memory device including a nano dot and a method of fabricating the same are provided. The nonvolatile memory device may include a lower electrode, an oxide layer on the lower electrode, a nano dot in the oxide layer and an upper electrode on the oxide layer. In example embodiments, the current paths inside the oxide layer may be unified, thereby stabilizing the reset current.
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Chinese Office Action dated Jan. 16, 2009 w/translation.
Korean Office Action dated Nov. 22, 2006.
Cha Young-kwan
Cho Kyung-Sang
Lee Myoung-jae
Park Sang-Jin
Seo Sun-ae
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Sefer A.
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