Nonvolatile memory device including nano dot and method of...

Details Nonvolatile memory device including nano dot and method of... Nonvolatile memory device including nano dot and method of...

2011-08-16

2011-08-16

Sefer, A. (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S237000, C438S585000, C257S295000, C257S314000, C257SE21210, C257SE21209

Reexamination Certificate

active

07998804

ABSTRACT:
A nonvolatile memory device including a nano dot and a method of fabricating the same are provided. The nonvolatile memory device may include a lower electrode, an oxide layer on the lower electrode, a nano dot in the oxide layer and an upper electrode on the oxide layer. In example embodiments, the current paths inside the oxide layer may be unified, thereby stabilizing the reset current.

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