Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-05-07
1999-08-03
Booth, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438201, H01L 218247
Patent
active
059337320
ABSTRACT:
An FET semiconductor device includes an N-region and a P-region formed in the substrate with the N-region juxtaposed with the P-region with an interface between the N-region and the P-region and with a first channel in the N-region and a second channel in the P-region. An N+ drain region is near the interface on one side of the first channel in the P-region. A P+ drain region is near the interface on one side of the second channel in the N-region. An N+ source region is on the opposite side of the first channel from the interface in the P-region. A P+ source region is on the opposite side of the first channel from the interface in the N-region. A wide gate electrode EEPROM stack bridges the channels in the N-region and the P-region. The stack includes a tunnel oxide layer, a floating gate electrode layer, an interelectrode dielectric layer, and a control gate electrode. An N+ drain region is formed in the surface of the P-region self-aligned with the gate electrode stack. A P+ drain region is formed in the surface of the N-region self-aligned with the gate electrode stack.
REFERENCES:
patent: 4646435 (1987-03-01), Owens et al.
patent: 4816883 (1989-03-01), Baldi
patent: 5198380 (1993-03-01), Harari
patent: 5506803 (1996-04-01), Jex
patent: 5506816 (1996-04-01), Hirose et al.
patent: 5616942 (1997-04-01), Song
Wolf, "Silicon Processing for the VLSI Era vol. 2: Process Integration", Lattice Press, pp. 387-389, 1990.
Kuo Di-Son
Lee Jian-Hsing
Liaw Shiou-Hann
Lin Yai-Fen
Ackerman Stephen B.
Booth Richard
Jones II Graham S.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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