Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-26
2006-09-26
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S201000, C438S211000
Reexamination Certificate
active
07112489
ABSTRACT:
A method of implanting a middle of line (MOL) implant layer of a flash memory device that does not require a descumming step is disclosed. In a first embodiment, the method includes depositing a negative tone resist over the MOL implant layer. Portions of the negative tone resist in and above a plurality of trenches are not exposed to optical radiation, while portions surrounding the plurality of trenches are exposed. The unexposed portions are developed out thereby leaving a bottom surface of each trench substantially free of a resist residue. Implants can be placed in the MOL implant layer without the need for a descumming step. In a second embodiment, a bi-layer resist is deposited on the MOL implant layer, wherein the bi-layer resist includes a silicon containing top layer and a bottom layer. The bi-layer resist is patterned to expose a portion of the bottom layer that resides in and above a plurality of trenches. The bottom layer is dry etch developed using oxygen plasma as the etchant, thereby leaving a bottom surface of each trench substantially free of a resist residue. Implants can be placed in the MOL implant layer without the need for a descumming step.
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Lyons Christopher F.
Minvielle Anna
Plat Marina V.
Advanced Micro Devices , Inc.
Lebentritt Michael
Lee Cheung
Renner , Otto, Boisselle & Sklar, LLP
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