Multiple stage process for cleaning process chambers

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C216S075000, C216S079000, C134S001100, C134S021000, C134S022170, C134S002000, C438S710000, C438S721000, C438S723000

Reexamination Certificate

active

06872322

ABSTRACT:
A process for etching multiple layers on a substrate25in an etching chamber30and cleaning a multilayer etchant residue formed on the surfaces of the walls45and components of the etching chamber30. In multiple etching steps, process gas comprising different compositions of etchant gas is used to etch layers on the substrate25thereby depositing a compositionally variant etchant residue inside the chamber30. In one cleaning step, a first cleaning gas is added to the process gas to clean a first residue or to suppress deposition of the first residue onto the chamber surfaces. In a second cleaning step, another residue composition is cleaned off the chamber surfaces using a second cleaning gas composition.

REFERENCES:
patent: 4282267 (1981-08-01), Kuyel
patent: 4433228 (1984-02-01), Nishimatsu et al.
patent: 4465532 (1984-08-01), Fukano
patent: 4490209 (1984-12-01), Hartman
patent: 4502914 (1985-03-01), Trumpp et al.
patent: 4576692 (1986-03-01), Fukuta et al.
patent: 4705595 (1987-11-01), Okudaira et al.
patent: 4738748 (1988-04-01), Kisa
patent: 4779991 (1988-10-01), Kitamura et al.
patent: 4786352 (1988-11-01), Benzing
patent: 4818326 (1989-04-01), Liu et al.
patent: 4831963 (1989-05-01), Saito et al.
patent: 4863561 (1989-09-01), Freeman et al.
patent: 4867841 (1989-09-01), Loewenstein et al.
patent: 4876212 (1989-10-01), Koury
patent: 4975144 (1990-12-01), Yamazaki et al.
patent: 4992134 (1991-02-01), Gupta et al.
patent: 4992136 (1991-02-01), Tachi et al.
patent: 4994410 (1991-02-01), Sun et al.
patent: 5002632 (1991-03-01), Loewenstein et al.
patent: 5013398 (1991-05-01), Long et al.
patent: 5035768 (1991-07-01), Mu et al.
patent: 5084126 (1992-01-01), McKee
patent: 5094712 (1992-03-01), Becker et al.
patent: 5110408 (1992-05-01), Fujii et al.
patent: 5110411 (1992-05-01), Long
patent: 5118387 (1992-06-01), Kadomura
patent: 5158644 (1992-10-01), Cheung et al.
patent: 5160407 (1992-11-01), Latchford et al.
patent: 5164330 (1992-11-01), Davis et al.
patent: 5176792 (1993-01-01), Fullowan et al.
patent: 5180464 (1993-01-01), Tatsumi et al.
patent: 5188980 (1993-02-01), Lai
patent: 5192702 (1993-03-01), Tseng
patent: 5256245 (1993-10-01), Keller et al.
patent: 5259923 (1993-11-01), Hori et al.
patent: 5281302 (1994-01-01), Gabric et al.
patent: 5282899 (1994-02-01), Balmashnov et al.
patent: 5312519 (1994-05-01), Sakai et al.
patent: 5318668 (1994-06-01), Tamaki et al.
patent: 5338398 (1994-08-01), Szwejkowski et al.
patent: 5354417 (1994-10-01), Cheung et al.
patent: 5356478 (1994-10-01), Chen et al.
patent: 5358601 (1994-10-01), Cathey
patent: 5378311 (1995-01-01), Nagayama et al.
patent: 5382316 (1995-01-01), Hills et al.
patent: 5384009 (1995-01-01), Mak et al.
patent: 5413954 (1995-05-01), Aydil et al.
patent: 5431772 (1995-07-01), Babie et al.
patent: 5443686 (1995-08-01), Jones et al.
patent: 5449411 (1995-09-01), Fukuda et al.
patent: 5514622 (1996-05-01), Bornstein et al.
patent: 5521119 (1996-05-01), Chen et al.
patent: 5529197 (1996-06-01), Grewal
patent: 5605601 (1997-02-01), Kawasaki
patent: 5620615 (1997-04-01), Keller
patent: 5626775 (1997-05-01), Roberts et al.
patent: 5644153 (1997-07-01), Keller
patent: 5651856 (1997-07-01), Keller et al.
patent: 5700741 (1997-12-01), Liao
patent: 5716495 (1998-02-01), Butterbaugh et al.
patent: 5741396 (1998-04-01), Loewenstein
patent: 5753533 (1998-05-01), Saito
patent: 5756400 (1998-05-01), Ye et al.
patent: 5767021 (1998-06-01), Imai et al.
patent: 5788799 (1998-08-01), Steger et al.
patent: 5817534 (1998-10-01), Ye et al.
patent: 5843239 (1998-12-01), Shrotriya
patent: 5861233 (1999-01-01), Sekine et al.
patent: 5865896 (1999-02-01), Nowak et al.
patent: 5866483 (1999-02-01), Shiau et al.
patent: 5869401 (1999-02-01), Brunemeier et al.
patent: 5874363 (1999-02-01), Hoh et al.
patent: 5879575 (1999-03-01), Tepman et al.
patent: 5891799 (1999-04-01), Tsui
patent: 6090718 (2000-07-01), Soga et al.
patent: 6125859 (2000-10-01), Kao et al.
patent: 6159811 (2000-12-01), Shin et al.
patent: 4132559 (1993-04-01), None
patent: 0200951 (1986-04-01), None
patent: 0272143 (1988-06-01), None
patent: 0314990 (1989-05-01), None
patent: 0463373 (1992-01-01), None
patent: 0516043 (1992-12-01), None
patent: 0555546 (1993-08-01), None
patent: 0697467 (1996-02-01), None
patent: 0709877 (1996-05-01), None
patent: 0746015 (1996-12-01), None
patent: 0837497 (1998-04-01), None
patent: 01050427 (1989-02-01), None
patent: 6177092 (1994-06-01), None
patent: 7029879 (1995-01-01), None
patent: 1023387 (1998-09-01), None
patent: 9615545 (1996-05-01), None
Kimizuka, Masakatsu et al. “Pattern Profile Control in Magnetron reactive ion etching of Poly-Si” J. Vac. Sci Technol. B 10(5), Sep./Oct. 1992. pp. 2192-2196.
Avdil. et al. “Multiple Steady States in a Radio Frequency Chlorine Glow Discharge.”J Appl. Phys.vol. 69, No. 1, Jan. 1, 1991, pp. 109-114.
Hillenius. S.J. et al., “A Symmetric Submicron CMOS Technology.”IEEEpp. 252-255, 1986.
PCT Notification of International Search Report dated Feb. 4, 1999.
PCT Search Report dated Oct. 28, 1999.
PCT International Preliminary Examination Report dated Feb. 14, 2000.
PCT Search Report dated Nov. 8, 2000.
PCT Report dated Jun. 22, 2001. European Patent Office. P.B. 5818 Patentlaan 2 N1.-2280 IIV Rijswijk.
Zaleski. et al “Jungsten Silicide/Polysilicon Stack Etching using Mixed Fluorine Chlorine Chemistry in a High Density Plasma Chamber”.Electrochemical Society Proceedingsvol. 98-4, pp. 203-209.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Multiple stage process for cleaning process chambers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multiple stage process for cleaning process chambers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple stage process for cleaning process chambers will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3396821

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.