Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-05-13
2008-05-13
Parker, Kenneth (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S261000, C438S266000, C438S287000, C257S324000, C257SE21679
Reexamination Certificate
active
11372290
ABSTRACT:
An array of NROM flash memory cells configured to store at least two bits per four F2. Split vertical channels are generated along each side of adjacent pillars. A single control gate is formed over the pillars and in the trench between the pillars. The split channels can be connected by an n+ region at the bottom of the trench or the channel wrapping around the trench bottom. Each gate insulator is capable of storing a charge that is adequately separated from the other charge storage area due to the increased channel length.
REFERENCES:
patent: 4184207 (1980-01-01), McElroy
patent: 4420504 (1983-12-01), Cooper
patent: 4755864 (1988-07-01), Ariizumi
patent: 4881114 (1989-11-01), Mohsen
patent: 5241496 (1993-08-01), Lowrey
patent: 5330930 (1994-07-01), Chi
patent: 5341328 (1994-08-01), Ovshinsky
patent: 5378647 (1995-01-01), Hong
patent: 5379253 (1995-01-01), Bergemont
patent: 5397725 (1995-03-01), Wolstenholme
patent: 5406509 (1995-04-01), Ovshinsky
patent: 5467305 (1995-11-01), Bertin
patent: 5576236 (1996-11-01), Chang
patent: 5610099 (1997-03-01), Stevens
patent: 5617351 (1997-04-01), Bertin
patent: 5768192 (1998-06-01), Eitan
patent: 5792697 (1998-08-01), Wen
patent: 5858841 (1999-01-01), Hsu
patent: 5892710 (1999-04-01), Fazio
patent: 5911106 (1999-06-01), Tasaka
patent: 5936274 (1999-08-01), Forbes
patent: 5946558 (1999-08-01), Hsu
patent: 5966603 (1999-10-01), Eitan
patent: 5973356 (1999-10-01), Noble
patent: 5990509 (1999-11-01), Burns
patent: 5991225 (1999-11-01), Forbes
patent: 5994745 (1999-11-01), Hong
patent: 6011725 (2000-01-01), Eitan
patent: 6028342 (2000-02-01), Chang
patent: 6030871 (2000-02-01), Eitan
patent: 6044022 (2000-03-01), Nachumovsky
patent: 6072209 (2000-06-01), Noble
patent: 6081456 (2000-06-01), Dadashev
patent: 6093606 (2000-07-01), Lin
patent: 6108240 (2000-08-01), Lavi
patent: 6114725 (2000-09-01), Furukawa
patent: 6124729 (2000-09-01), Noble
patent: 6133102 (2000-10-01), Wu
patent: 6134156 (2000-10-01), Eitan
patent: 6144093 (2000-11-01), Davis
patent: 6147904 (2000-11-01), Liron
patent: 6150687 (2000-11-01), Noble
patent: 6157570 (2000-12-01), Nachumovsky
patent: 6172396 (2001-01-01), Chang
patent: 6174758 (2001-01-01), Nachumovsky
patent: 6175523 (2001-01-01), Yang
patent: 6181597 (2001-01-01), Nachumovsky
patent: 6184089 (2001-02-01), Chang
patent: 6201282 (2001-03-01), Eitan
patent: 6201737 (2001-03-01), Hollmer
patent: 6204529 (2001-03-01), Lung
patent: 6207504 (2001-03-01), Hsieh
patent: 6208557 (2001-03-01), Bergemont
patent: 6215702 (2001-04-01), Derhacobian
patent: 6218695 (2001-04-01), Nachumovsky
patent: 6222768 (2001-04-01), Hollmer
patent: 6240020 (2001-05-01), Yang
patent: 6243300 (2001-06-01), Sunkavalli
patent: 6251731 (2001-06-01), Wu
patent: 6255166 (2001-07-01), Ogura
patent: 6256231 (2001-07-01), Lavi
patent: 6266281 (2001-07-01), Derhacobian
patent: 6269023 (2001-07-01), Derhacobian
patent: 6272043 (2001-08-01), Hollmer
patent: 6275414 (2001-08-01), Randolph
patent: 6282118 (2001-08-01), Lung
patent: 6291854 (2001-09-01), Peng
patent: 6297096 (2001-10-01), Boaz
patent: 6303436 (2001-10-01), Sung
patent: 6303479 (2001-10-01), Snyder
patent: 6320223 (2001-11-01), Hueting
patent: 6327174 (2001-12-01), Jung
patent: 6331467 (2001-12-01), Brown
patent: 6348711 (2002-02-01), Eitan
patent: 6392930 (2002-05-01), Jung
patent: 6417053 (2002-07-01), Kuo
patent: 6421275 (2002-07-01), Chen
patent: 6429063 (2002-08-01), Eitan
patent: 6432778 (2002-08-01), Lai
patent: 6461949 (2002-10-01), Chang
patent: 6468864 (2002-10-01), Sung
patent: 6469342 (2002-10-01), Kuo
patent: 6477084 (2002-11-01), Eitan
patent: 6486028 (2002-11-01), Chang
patent: 6487050 (2002-11-01), Liu
patent: 6498377 (2002-12-01), Lin
patent: 6514831 (2003-02-01), Liu
patent: 6531735 (2003-03-01), Kamigaki et al.
patent: 6531887 (2003-03-01), Sun
patent: 6541815 (2003-04-01), Mandelman
patent: 6545309 (2003-04-01), Kuo
patent: 6552387 (2003-04-01), Eitan
patent: 6559013 (2003-05-01), Pan
patent: 6576511 (2003-06-01), Pan
patent: 6580135 (2003-06-01), Chen
patent: 6580630 (2003-06-01), Liu
patent: 6602805 (2003-08-01), Chang
patent: 6607957 (2003-08-01), Fan
patent: 6610586 (2003-08-01), Liu
patent: 6613632 (2003-09-01), Liu
patent: 6617204 (2003-09-01), Sung
patent: 6660590 (2003-12-01), Yoo
patent: 6670246 (2003-12-01), Hsiao
patent: 6768166 (2004-07-01), Hagemeyer
patent: 6885060 (2005-04-01), Nomoto et al.
patent: 6897522 (2005-05-01), Harari et al.
patent: 6925007 (2005-08-01), Harari et al.
patent: 6979857 (2005-12-01), Forbes
patent: 7067875 (2006-06-01), Shukuri
patent: 7075148 (2006-07-01), Hofmann et al.
patent: 2001/0001075 (2001-05-01), Ngo
patent: 2001/0004332 (2001-06-01), Eitan
patent: 2001/0011755 (2001-08-01), Tasaka
patent: 2002/0142569 (2002-10-01), Chang
patent: 2002/0146885 (2002-10-01), Chen
patent: 2002/0151138 (2002-10-01), Liu
patent: 2002/0177275 (2002-11-01), Liu
patent: 2002/0182829 (2002-12-01), Chen
patent: 2003/0057997 (2003-03-01), Sun
patent: 2003/0067807 (2003-04-01), Lin
patent: 2003/0117861 (2003-06-01), Maayan
patent: 2003/0235075 (2003-12-01), Forbes
patent: 2003/0235076 (2003-12-01), Forbes
patent: 2004/0004859 (2004-01-01), Forbes et al.
patent: 2004/0031984 (2004-02-01), Kianian
patent: 2004/0066672 (2004-04-01), Forbes
patent: 2004/0094781 (2004-05-01), Hsiao
patent: 2004/0097036 (2004-05-01), Hsiao
patent: 2004/0185617 (2004-09-01), Shukuri
patent: 84303740.9 (1985-01-01), None
patent: 90115805.5 (1991-02-01), None
patent: 01113179.4 (2002-12-01), None
patent: WO 2004/001802 (2003-12-01), None
B. Eitan et al., “Characterization of Channel Hot Electron Injection by the Subthreshold Slope of NROM™ Device,” IEEE Electron Device Lett., vol. 22, No. 11, (Nov. 2001) pp. 556-558, Copyright 2001 IEEE.
B. Eitan et al., “Spatial Characterization of Hot Carriers Injected into the Gate Dielectric Stack of a MOFSET Based on Non-Volatile Memory Device,” date unknown, pp. 58-60.
B. Eitan et al., “NROM: A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell,” IEEE Electron Device Lett, vol. 21, No. 11, (Nov. 2000), pp. 543-545, Copyright 2000 IEEE.
E. Maayan et al., “A 512Mb NROM Flash Data Storage Memory with 8MB/s Data Range,” Dig. IEEE Int. Solid-State Circuits Conf., San Francisco, (Feb 2002), pp. 1-8, Copyright Saifun Semiconductors Ltd. 2002.
E. Maayan et al., “A 512Mb NROM Flash Data Storage Memory with 8MB/s Data Range,” ISSCC 2002 Visuals Supplement, Session 6, SRAM and Non-Volatile Memories, 6.1 and 6.2, pp. 76-77, 407-408. Copyright 1990 IEEE.
M. Janai, “Data Retention, Endurance and Acceleration Factors of NROM Devices,” IEEE 41stAnnual International Reliability Physics Symposium, Dallas, TX (2003), pp. 502-505, Copyright 1989 IEEE.
S. Minami and Y. Kamigaki, “A Novel MONOS Nonvolatile Memory Device Ensuring 10-Year Data Retention after 107Erase/Write Cycles,” IEEE Transactions on Electron Devices, vol. 40, No. 11 (Nov. 1993) pp. 2011-2017, Copyright 1998 IEEE.
C. Pan, K. Wu, P. Freiberger, A. Chatterjee, G. Sery, “A Scaling Methodology for Oxide-Nitride-Oxide Interpoly Dielectric for EPROM Applications,” IEEE Transactions on Electron Devices, vol. 37, No. 6, (Jun. 1990), pp. 1439-1443, Copyright 1990 IEEE.
P. Manos and C. Hart, “A Self-Aligned EPROM Structure with Superior Date Retention,” IEEE Electron Device Letters, vol. 11, No. 7, (Jul. 1990) pp. 309-311, Copyright 1990 IEEE.
W. Owen and W. Tchon, “E2PROM Product Issues and Technology Trends,” IEEE 1989, pp. 17-19, Copyright 1989 IEEE.
T. Huang, F. Jong, T. Chao, H. Lin, L. Leu, K. Young, C. Lin, K. Chiu, “Improving Radiation Hardness of EEPROM/Flash Cell BY N20 Annealing,” IEEE Electron Device Letters, vol. 19, No. 7 (Jul. 1998), pp. 256-258, Copyright 1998 IEEE.
B. Eitan et al., “Electrons Retention Model for Localized Charge in Oxide-Nitride-Oxide (ONO) Dielectric,” IEEE Device Lett., vol. 23, No. 9, (Sep. 2002), pp. 556-558. Copyright 2002 IEEE.
T. Nozaki, T. Tanaka, Y. Kijiya, E. Kinoshita, T. Tsuch
Diaz José R
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Parker Kenneth
LandOfFree
Multi-state NROM device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multi-state NROM device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-state NROM device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3922461