Leonard Forbes

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4 F2 folded bit line dram cell structure having buried bit...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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4 F2 folded bit line DRAM cell structure having buried bit...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate

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4F 2 EEPROM NROM memory arrays with vertical devices

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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4F 2 EEPROM NROM memory arrays with vertical devices

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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6F 2 3-Transistor DRAM gain cell

Static information storage and retrieval – Systems using particular element – Capacitors
Reexamination Certificate

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Profile ID: LFUS-PAI-P-62139

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