Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-03-21
2009-11-03
Andújar, Leonardo (Department: 2893)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Combined with the removal of material by nonchemical means
Reexamination Certificate
active
07611996
ABSTRACT:
Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.
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Fujita et al, “Notable improvement in porous low-k film properties using electron-beam cure method” Interconnect Technology Conference 2003. Proceedings of the IEEE 2003 International Jun. 2-4, 2003 Piscataway, NJ USA IEEE Jun. 2, 2003 pp. 106-108.
Ahn Sang H.
D'Cruz Lester A.
Demos Alexandros T.
Ho Dustin W.
M'Saad Hichem
Andújar Leonardo
Applied Materials Inc.
Harrison Monica D
Townsend and Townsend / and Crew LLP
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