Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-12-05
2000-09-05
Nelms, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
427 38, 427 39, 438624, 438633, 438637, 438671, 438680, 438685, H01L 2144
Patent
active
061142425
ABSTRACT:
A new method of forming a molybdenum nitride barrier layer by chemical vapor deposition from the precursor bisdiethylamido-bistertbutylimido-molybdenum (BDBTM) as a diffusion barrier for copper metallization is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer is deposited overlying the semiconductor devise structures. A via opening is etched through the insulating layer to contact one of the semiconductor device structures. A barrier layer of molybdenum nitride is conformally deposited by chemical vapor deposition within the via. A layer of copper is deposited overlying the molybdenum nitride barrier layer wherein the molybdenum nitride barrier layer prevents copper diffusion to complete the copper metallization in the fabrication of an integrated circuit device.
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Chiu Hien-Tien
Sun Shi-Chung
Ackerman Stephen B.
Berry Renee R.
Nelms David
Pike Rosemary L. S.
Saile George O.
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