Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-04-10
2007-04-10
Crane, Sara (Department: 2811)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S595000, C438S725000, C438S780000
Reexamination Certificate
active
10728995
ABSTRACT:
A method of manufacturing a microelectronic device comprising forming a patterned feature over a substrate and employing a fluorine-containing plasma source to deposit a conformal polymer layer over the patterned feature and the substrate. The polymer layer is etched to expose the patterned feature and a portion of the substrate, thereby forming polymer spacers on opposing sides of the patterned feature.
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Chan Bor-Wen
Tao Han-Jan
Wang Yu-I
Crane Sara
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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