Microelectronic device having disposable spacer

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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C438S595000, C438S725000, C438S780000

Reexamination Certificate

active

10728995

ABSTRACT:
A method of manufacturing a microelectronic device comprising forming a patterned feature over a substrate and employing a fluorine-containing plasma source to deposit a conformal polymer layer over the patterned feature and the substrate. The polymer layer is etched to expose the patterned feature and a portion of the substrate, thereby forming polymer spacers on opposing sides of the patterned feature.

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