Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-09
2008-10-21
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S607000, C438S503000, C438S494000
Reexamination Certificate
active
07439142
ABSTRACT:
In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsilane, a first etchant, and hydrogen gas to deposit a first silicon-containing layer thereon. The first silicon-containing layer may be selectively deposited on the source/drain regions of the substrate while the first silicon-containing layer may be etched away on the surface of the dielectric materials of the substrate. Subsequently, the process further provides exposing the substrate to a second process gas comprising dichlorosilane and a second etchant to deposit a second silicon-containing layer selectively over the surface of the first silicon-containing layer on the substrate.
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Chinese Office Action for Chinese Application No. 200580006136.2 dated May 23, 2008.
Dalida Nicholas C.
Kim Yihwan
Samoilov Arkadii V.
Sanchez Errol
Applied Materials Inc.
Patterson & Sheridan LLP
Trinh Michael
LandOfFree
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