Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-20
2009-11-10
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S597000, C438S637000, C438S638000, C438S699000, C438S702000, C257SE21252, C257SE21256, C257SE21277, C257SE21538, C257SE21582, C257SE27088, C257SE27112, C257SE23011, C257SE23013, C257SE25013
Reexamination Certificate
active
07615480
ABSTRACT:
Presented are methods of fabricating three-dimensional integrated circuits that include post-contact back end of line through-hole via integration for the three-dimensional integrated circuits. In one embodiment, the method comprises forming metal plug contacts through a hard mask and a premetal dielectric to transistors in the semiconductor. The method also includes etching a hole for a through-hole via through the hard mask to the semiconductor using a patterned photoresist process, removing the patterned photoresist and using a hard mask process to etch the hole to an amount into the semiconductor. The method further includes depositing a dielectric liner to isolate the hole from the semiconductor, depositing a gapfill metal to fill the hole, and planarizing the surface of the substrate to the hard mask. Another aspect of the present invention includes three-dimensional integrated circuits fabricated according to methods of the present invention.
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Boyd John
Dordi Yezdi
Li Shijian
Redeker Fritz
Yoon Hyungsuk Alexander
Lam Research Corporation
Lebentritt Michael S
Williams Larry
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