Methods of manufacturing semiconductor device having recess...

Details Methods of manufacturing semiconductor device having recess... Methods of manufacturing semiconductor device having recess...

2011-08-23

2011-08-23

Tsai, H. Jey (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S692000, C257SE29201

Reexamination Certificate

active

08003464

ABSTRACT:
Methods of manufacturing a semiconductor device having an RCAT are provided. The method includes forming a first recess having a first depth formed in an active region of a semiconductor substrate, and a second recess having a second depth that is less than the first depth formed in an isolation layer. The depth of the second recess is decreased by removing the isolation layer from the upper surface of the isolation layer by a desired thickness. A gate dielectric layer is formed on an inner wall of the first recess and a gate is formed on the gate dielectric layer.

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patent: 2007/0082440 (2007-04-01), Shiratake
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patent: 2007-123551 (2007-05-01), None
patent: 1020050112790 (2005-12-01), None
patent: 1020070017593 (2007-02-01), None

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