Methods of forming semiconductor devices having a trench...

Details Methods of forming semiconductor devices having a trench... Methods of forming semiconductor devices having a trench...

2008-07-08

2008-07-08

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S426000, C438S435000, C438S770000, C438S786000, C257SE21546, C257SE21550, C257SE21628

Reexamination Certificate

active

07396729

ABSTRACT:
A semiconductor device is formed by providing a substrate. A trench is formed in the substrate. Beveled surfaces are formed at upper portions of sidewalls of the trench opposite a bottom surface of the trench, respectively. An oxide layer is formed in the trench such that the oxide layer is thicker on the beveled surfaces of the trench than on other surfaces of the trench.

REFERENCES:
patent: 6599810 (2003-07-01), Kepler et al.
patent: 6709924 (2004-03-01), Yu et al.
patent: 6734072 (2004-05-01), Chong et al.
patent: 6825544 (2004-11-01), Jin
patent: 2002/0182826 (2002-12-01), Cheng et al.
patent: 2003/0181049 (2003-09-01), Huang et al.
patent: 1020040003892 (2004-01-01), None
patent: 1020040008519 (2004-01-01), None

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