Methods of forming integrated circuit devices having stacked...

Details Methods of forming integrated circuit devices having stacked... Methods of forming integrated circuit devices having stacked...

2011-08-16

2011-08-16

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S587000, C438S588000, C438S592000, C438S593000, C438S594000, C257SE21409

Reexamination Certificate

active

07998810

ABSTRACT:
A method of forming a gate electrode of a semiconductor device is provided, the method including: forming a plurality of stacked structures each comprising a tunnel dielectric layer, a first silicon layer for floating gates, an intergate dielectric layer, a second silicon layer for control gates, and a mask pattern, on a semiconductor substrate in the stated order; forming a first interlayer dielectric layer between the plurality of stacked structures so that a top surface of the mask pattern is exposed; selectively removing the mask pattern of which the top surface is exposed; forming a third silicon layer in an area from which the hard disk layer was removed, and forming a silicon layer comprising the third silicon layer and the second silicon layer; recessing the first interlayer dielectric layer so that an upper portion of the silicon layer protrudes over the he first interlayer dielectric layer; and forming a metal silicide layer on the upper portion of the silicon layer.

REFERENCES:
patent: 6159797 (2000-12-01), Lee
patent: 6251729 (2001-06-01), Montree et al.
patent: 6291301 (2001-09-01), Chen
patent: 7622349 (2009-11-01), Sadd et al.
patent: 2008/0048245 (2008-02-01), Kito et al.
patent: 2008/0116503 (2008-05-01), Tsurumi et al.
patent: 2009/0001444 (2009-01-01), Matsuoka et al.
patent: 2009/0191699 (2009-07-01), Jung et al.
patent: 2003-007861 (2003-01-01), None
patent: 1020030044145 (2003-06-01), None

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