Methods of forming integrated circuit capacitors using trench is

Details Methods of forming integrated circuit capacitors using trench is Methods of forming integrated circuit capacitors using trench is

1997-12-23

2000-11-21

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438239, 438381, 438386, 438692, H01L 218234, H01L 218244

Patent

active

061502065

ABSTRACT:
Methods of forming integrated circuit capacitors include the steps of forming a trench in a first electrically insulating layer and then forming a first electrically conductive layer on a sidewall and bottom of the trench. A dielectric layer is then formed on the first electrically conductive layer. Next, a second electrically conductive layer is formed on the dielectric layer, opposite the first electrically conductive layer. A step is then performed to planarize the first and second electrically conductive layers to define first and second electrodes of a capacitor in the trench. In particular, the step of planarizing the first electrically conductive layer comprises planarizing the first electrically conductive layer to define a first electrode having a U-shaped cross-section. This step results in the formation of a first electrode having a relatively large effective area (which is a function of the depth of the trench) for a given lateral dimension.

REFERENCES:
patent: 5275974 (1994-01-01), Ellul et al.
patent: 5629539 (1997-05-01), Aoki et al.
patent: 5674787 (1997-10-01), Zhao et al.
patent: 5879985 (1999-03-01), Gambino et al.

Affiliated with

Also associated with

Rating

Methods of forming integrated circuit capacitors using trench is does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming integrated circuit capacitors using trench is, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming integrated circuit capacitors using trench is will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1255927