Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-30
2011-08-30
Arora, Ajay K (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S392000, C438S756000, C438S775000, C257SE21267
Reexamination Certificate
active
08008154
ABSTRACT:
Methods of forming an insulating film include forming an insulating film on a substrate. A first impurity is injected into the insulating film using a thermal process under a first set of processing conditions to form a first impurity concentration peak in a lower portion of the insulating film. A second impurity is injected into the insulating film using the thermal process under a second set of processing conditions, different from the first set of processing conditions, to form a second impurity concentration peak in an upper portion of the insulating film. Injecting the first impurity and injecting the second impurity may be carried out without using plasma and the first impurity concentration peak may be higher than the second impurity concentration peak.
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patent: 2003/0201491 (2003-10-01), Chung
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patent: 2005/0006693 (2005-01-01), Ngo et al.
patent: 2005/0266637 (2005-12-01), Wang
patent: 02-24612 (1990-10-01), None
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patent: 1020060057958 (2006-05-01), None
Baek Sung-kweon
Choi Si-Young
Heo Jin-Hwa
Hwang Ki-Hyun
Kim Chul-Sung
Arora Ajay K
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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