Methods of forming doped and un-doped strained semiconductor...

Details Methods of forming doped and un-doped strained semiconductor... Methods of forming doped and un-doped strained semiconductor...

2007-08-21

2007-08-21

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Graded composition

C438S045000, C438S087000, C438S473000, C438S474000

Reexamination Certificate

active

11057653

ABSTRACT:
Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduction of dopant atoms and/or C. Processes for forming semiconductor films infused into and/or deposited onto the surfaces of semiconductor and/or dielectric substrates are also described. Such films may be doped and/or strained as well.

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patent: WO 2004/053945 (2004-06-01), None

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