Methods of forming devices including different gate...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S275000, C257SE21637, C257SE21639, C257SE21625

Reexamination Certificate

active

07910421

ABSTRACT:
Provided is a method of manufacturing a semiconductor device, in which the thickness of a gate insulating layer of a CMOS device can be controlled. The method can include selectively injecting fluorine (F) into a first region on a substrate and avoiding injecting the fluorine (F) into a second region on the substrate. A first gate insulating layer is formed of oxynitride layers on the first and second regions to have first and second thicknesses, respectively, where the first thickness is less than the second thickness. A second gate insulating layer is formed on the first gate insulating layer and a gate electrode pattern is formed on the second gate insulating layer.

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Korean First Office Action (4 pages) corresponding to Korean Patent Application No. 10-2007-0056045; Dated: Nov. 19, 2008.

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