Methods of fabricating integrated circuit conductive contact...

Details Methods of fabricating integrated circuit conductive contact... Methods of fabricating integrated circuit conductive contact...

2006-10-17

2006-10-17

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000

Reexamination Certificate

active

07122468

ABSTRACT:
An integrated circuit includes a substrate and a first insulating layer on the substrate that includes a first hole including a floor and a sidewall. A first conductive contact extends conformally on the sidewall and floor to define a groove in the first hole. A second insulating layer is provided on the first insulating layer and includes a second hole that exposes the groove. A second conductive contact is provided in the second hole and in the groove. These integrated circuits are fabricated by forming a first insulating layer on a substrate that includes a first hole including a floor and a sidewall. A first conductive contact is conformally formed on the sidewall and floor to define a groove in the first hole. A second insulating layer is formed on the first insulating layer and includes a second hole that exposes the groove. A second conductive contact is formed in the second hole and in the groove.

REFERENCES:
patent: 5563448 (1996-10-01), Lee et al.
patent: 6028362 (2000-02-01), Omura
patent: 6048792 (2000-04-01), Watanabe et al.
patent: 6602749 (2003-08-01), Tu et al.
patent: 6680538 (2004-01-01), Kim et al.
patent: 2002/0041030 (2002-04-01), Kim et al.

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