Methods for forming pattern using electron beam and cell...

Details Methods for forming pattern using electron beam and cell... Methods for forming pattern using electron beam and cell...

2006-11-01

2010-06-15

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

C430S312000, C430S328000, C430S394000, C430S942000

Reexamination Certificate

active

07736838

ABSTRACT:
Provided methods for forming a pattern using electron beam and cell masks for electron beam lithography. The methods may include forming a resist layer on a substrate, the resist layer including a first region, a second region surrounding the first region, and a third region surrounding the second region. The second may be irradiated with electron beam at a first dose, and the third region may be irradiated with an electron beam at a second dose less than the first dose. The cell mask may include a mask substrate and a shielding region disposed on the mask substrate. A transmitting region may extend a distance from the shielding region. A gray pattern region may be disposed around the transmitting region. The gray pattern region may include patterns having a pitch smaller than a resolution limit.

REFERENCES:
patent: 06-267833 (1994-09-01), None
patent: 10-303120 (1998-11-01), None
patent: 10-2003-0056000 (2003-07-01), None

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