Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Fusing dopant with substrate
Patent
1996-11-13
1999-11-30
Bowers, Charles
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Fusing dopant with substrate
438542, H01L 2124, H01L 2140
Patent
active
059942096
ABSTRACT:
The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
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Gee Paul
Nguyen Bang
Xia Li-Qun
Yieh Ellie
Applied Materials Inc.
Bowers Charles
Thompson Craig
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