Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2006-05-02
2006-05-02
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S790000, C438S778000, C438S787000, C438S958000
Reexamination Certificate
active
07037859
ABSTRACT:
Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.
REFERENCES:
patent: 5356722 (1994-10-01), Nguyen et al.
patent: 5710079 (1998-01-01), Sukharev
patent: 5807785 (1998-09-01), Ravi
patent: 5965203 (1999-10-01), Gabric et al.
patent: 6043136 (2000-03-01), Jang et al.
patent: 6106678 (2000-08-01), Shufflebotham et al.
patent: 6133160 (2000-10-01), Komiyama et al.
patent: 6149987 (2000-11-01), Perng et al.
patent: 6218268 (2001-04-01), Xia et al.
patent: 6236105 (2001-05-01), Kariya
patent: 6319849 (2001-11-01), Oda et al.
patent: 6331494 (2001-12-01), Olson et al.
patent: 6340435 (2002-01-01), Bjorkman et al.
patent: 6348421 (2002-02-01), Shu et al.
patent: 6489254 (2002-12-01), Kelkar et al.
patent: 6617259 (2003-09-01), Jung et al.
patent: 6733955 (2004-05-01), Geiger et al.
patent: 2002/0000195 (2002-01-01), Bang et al.
patent: 2002/0052128 (2002-05-01), Yu et al.
patent: 479315 (2002-03-01), None
Fujino et al., “Dependence of Deposition Characteristics on Base Materials in TEOS and Ozone CVD at Atmospheric Pressure,”J. Electrochem. Soc.,138(2):550-554 (1991).
Kwok et al., “Surface Releated Phenomena in Integrated PECVD/Ozone-TEOS SACVD Process for Sub-Half Micron Gap Fill: Electrostatic Effects,”J. Electrochem. Soc.,141(8):2172-2177 (1994).
Ingle Nitin K.
Xia Xinyua
Yuan Zheng
Applied Material Inc.
Thai Luan
Townsend and Townsend And Crew
LandOfFree
Method using TEOS ramp-up during TEOS/ozone CVD for improved... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method using TEOS ramp-up during TEOS/ozone CVD for improved..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method using TEOS ramp-up during TEOS/ozone CVD for improved... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3575294